STL20NM20N |
RFQ for STL20NM20N Required Field |
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| Technical/Catalog Information | STL20NM20N |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 800pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 50nC @ 10V |
| Package / Case | PowerFlat? (6 x 5) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STL20NM20N STL20NM20N 497 4657 6 ND 49746576ND 497-4657-6 |
| Product | Manufacturers | Pack | D/C |
| STL20NM20N | - | VFDFPN8 | `06+(pb-free) |
This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given onresistance.Its use is therefore ideal as primary switch in isolated DC-DC converters for Telecom and Computer applications.Used in combination with secondary-side low-voltage STripFETTM products,it contributes to reducing losses and boosting efficiency.The new PowerFLAT™ package allows a significant reduction in board space without compromising performance.
Typical Application |
Features |
| The MDmeshTM family is very suitable for increasing power density allowing system miniaturization and higher efficiencies | WORLDWIDE LOWEST GATE CHARGE TYPICAL RDS(on) = 0.088 IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE (1mm MAX) VERY LOW THERMAL RESISTANCE LOW GATE RESISTANCE LOW INPUT CAPACITANCE HIGH dv/dt and AVALANCHE CAPABILITIES |
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 150 | V |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 150 | V |
| VGS | Gate- source Voltage | ± 30 | V |
| ID(1) | Drain Current (continuos) at TC = 25(Steady State) Drain Current (continuos) at TC = 100 |
20 12.3 |
A A |
| IDM(3) | Drain Current (pulsed) | 80 | A |
| PTOT(2) | Total Dissipation at TC = 25(Steady State) | 2.5 | W |
| Ptot(1) | Total Dissipation at TC = 25(Steady State) | 80 | W |
| Derating Factor(2) | 0.02 | W/ | |
| dv/dt(5) | Peak Diode Recovery voltage slope | 10 | V/ns |
